1.0ibss Grouphttps://ibssgroup.com/fr/rich600338<blockquote class="wp-embedded-content" data-secret="T6shSAV6Y4"><a href="https://ibssgroup.com/fr/events/istfa-2023/">ISTFA 2023</a></blockquote><iframe sandbox="allow-scripts" security="restricted" src="https://ibssgroup.com/fr/events/istfa-2023/embed/#?secret=T6shSAV6Y4" width="600" height="338" title="« ISTFA 2023 » — ibss Group" data-secret="T6shSAV6Y4" frameborder="0" marginwidth="0" marginheight="0" scrolling="no" class="wp-embedded-content"></iframe><script> /*! This file is auto-generated */ !function(d,l){"use strict";l.querySelector&&d.addEventListener&&"undefined"!=typeof URL&&(d.wp=d.wp||{},d.wp.receiveEmbedMessage||(d.wp.receiveEmbedMessage=function(e){var t=e.data;if((t||t.secret||t.message||t.value)&&!/[^a-zA-Z0-9]/.test(t.secret)){for(var s,r,n,a=l.querySelectorAll('iframe[data-secret="'+t.secret+'"]'),o=l.querySelectorAll('blockquote[data-secret="'+t.secret+'"]'),c=new RegExp("^https?:$","i"),i=0;i<o.length;i++)o[i].style.display="none";for(i=0;i<a.length;i++)s=a[i],e.source===s.contentWindow&&(s.removeAttribute("style"),"height"===t.message?(1e3<(r=parseInt(t.value,10))?r=1e3:~~r<200&&(r=200),s.height=r):"link"===t.message&&(r=new URL(s.getAttribute("src")),n=new URL(t.value),c.test(n.protocol))&&n.host===r.host&&l.activeElement===s&&(d.top.location.href=t.value))}},d.addEventListener("message",d.wp.receiveEmbedMessage,!1),l.addEventListener("DOMContentLoaded",function(){for(var e,t,s=l.querySelectorAll("iframe.wp-embedded-content"),r=0;r<s.length;r++)(t=(e=s[r]).getAttribute("data-secret"))||(t=Math.random().toString(36).substring(2,12),e.src+="#?secret="+t,e.setAttribute("data-secret",t)),e.contentWindow.postMessage({message:"ready",secret:t},"*")},!1)))}(window,document); //# sourceURL=https://ibssgroup.com/wp-includes/js/wp-embed.min.js </script> The 49th International Symposium for Testing and Failure Analysis (ISTFA) is the premier event for microelectronics failure analysis. The focus on moving toward developing efficient and reliable power electronic devices for high-performing hardware components.  The complexity of highly integrated SiC and GaN devices requires an in-depth understanding of defect formation and degradation mechanisms as well […]